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Room-temperature threshold current density Jth against active-layer thickness d is reported for pulsed InGaAsP/InP double-heterostructure lasers operating at wavelengths near 1.23 μm. For d ≈ 1 μm, Jth/d is 5.0 kA cm−2 μm−1, whereas the lowest threshold is 1.6 kA cm−2 for d ≈ 0.2 μm. The threshold dependence is fitted by a numerical calculation based on a two-parameter gain model.
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Nahory et al. (1978) studied this question.
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