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A decrease in the cathodoluminescence produced in GaAs by a scanning electron probe has been observed when the probe is close to a p-n junction. The decreased intensity is shown to result from the drift of excess carriers across the junction. Measurements of the short-circuit current of the diode confirm this interpretation and provide a means of estimating minority carrier diffusion lengths.
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Wittry et al. (1965) studied this question.
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