Stable transverse mode operation has been realized for the first time in visible (780 nm) multiquantum well lasers composed of seven 3-nm-thick GaAs wells separated by six 5-nm-thick Ga0.8Al0.2As barriers grown by metalorganic chemical vapor deposition. A self-aligned structure with a built-in optical waveguide to stabilize the transverse mode is fabricated by a two-step epitaxial technique. Low threshold current (35 mA), high output power (up to 40 mW) in the fundamental transverse mode, and a very low degradation rate at 70 °C have been confirmed.
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Uomi et al. (1984) studied this question.
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