Measurements of the tunneling rate Γ out of the zero-voltage state for several Nb edge junctions with differing shunt capacitances are described. At zero temperature, increasing the shunt capacitance lowers Γ in agreement with dissipative calculations of the macroscopic-quantum-tunneling rate. As temperature increases, ln[Γ(T)Γ(0)]∝T² as recently predicted.
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Washburn et al. (1985) studied this question.
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