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An ultrahigh-vacuum system has been constructed and outfitted with molecular beam sources and surface analysis equipment [Auger electron spectroscopy (AES) and reflection high-energy electron diffraction (RHEED)]. The sample insertion system is a low-temperature apparatus. With this equipment, films can be grown in the 10−11–10−9-Torr range with substrate temperatures at 4.2–20 K. A modification of the system will permit growth at elevated temperatures followed by in situ low-temperature measurements. The design of the low-temperature apparatus permits extensive measurements to be taken in an environment in which the temperature can be controlled over a range from 0.3 to 300 K and the magnetic field from 10−7 to 6 T.
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Orr et al. (1985) studied this question.
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