Demonstration of Temperature-Dependent Analysis of GAA – β-(AlGa)₂O₃/Ga₂O₃High Electron Mobility Transistor

In this work, we have, designed and demonstrated Gate all around (GAA)-β-AGO/GO HEMT to achieve large current density, electron mobility and electron velocity at cryogenic temperatures. Because the controlling of the gate is better in GAA-based structures the performance of the proposed device is magnified for a different temperature range. The 2DEG channel mobility of the proposed device is boosted from 130 cm2/Vs at 300 K to 4100 cm2/Vs at 50 K. Mobility of the proposed device is boosted from the previous value by the factor of 2.5 at room temperature. The higher electron mobility at lower temperatures made it suitable to reach a larger saturation velocity center of the channel. Analog, RF and linearity parameters are analyzed with different temperature ranges at a gate length of 0.9 µm. The drain current and cutoff frequency of the device is 750 mA/mm and 18 GHz, respectively at 50 K and it reduces for a larger temperature. The breakdown voltage of the proposed device at 300 K is 139 V. The noise analysis is also taken for the investigation of its random nature. This type of device is used in power-switching applications.