InGaN/GaN nanowires grown on SiO_2 and light emitting diodes with low turn on voltages

are successfully transferred to a flexible polyimide sheet by Au-welding and epitaxial lift-off processes. The light-emitting diodes fabricated with the transferred nanowires are characterized by a turn-on voltage of approximately 4 V. The smaller turn-on voltage in contrast to those of conventional nanowire light-emitting diodes is due to the absence of an intermediate layer, which is removed during an epitaxial lift-off process. The measured electroluminescence shows peak wavelengths of 610-616 nm with linewidths of 116-123 nm.