Physics of real-space transfer transistors

The physics of real-space transfer transistors has been studied by self-consistent particle Monte Carlo methods. Results of our simulations reproduce all experimentally known features of these devices. In particular, we study and explain the reasons of negative differential resistance, saturation of drain and substrate currents, the negative transconductance [gm=(ΔId,sat/ΔVsub)<0] effect, the importance of the subsidiary minima (L-X valleys) in GaAs and of interface barrier heights, and the switching characteristics of these devices.