We report experimental results on a negative-resistance field-effect transistor (NERFET), grown by metalorganic chemical vapor deposition, which incorporates a strained In0.18Ga0.82As channel layer adjacent to the barrier. The thin InGaAs layer provides higher mobility and enhanced carrier confinement for the channel electrons. This device structure yields a significant increase in the drain current peak-to-valley ratio over comparable GaAs-AlGaAs NERFETs.
No takes yet. Share an insight, caveat, or question.
Favaro et al. (1989) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: