An AlGaAs/InGaAs/GaAs Strained Channel MISFET

A new strained channel MISFET (SC-MISFET) with n+-implanted source/drain regions was fabricated using lamp annealing method on an undoped AlGaAs/undoped InGaAs/undoped GaAs hetero-structure. The threshold voltage of this FIT reasonably agreed with that expected from the band diagram. This suggests that the strained InGaAs channel is scarcely disordered during high temperature annealing, and the interface state density is very small. The SC-MISFET can be expected to have additional advantages as compared with AlGaAs/GaAs MISFETs, such as an increased barrier height, an increased electron velocity.