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InGaAs/InP npn heterojunction bipolar transistors (HBTs) have been fabricated from LPE layers grown on semi-insulating InP substrates for application to integrated circuits. The inverted emitter configuration is used, which allows the growth of the active layers without any additional steps. The HBTs show stable characteristics without any hysteresis and with current gains up to 25 for 0.7 μm base width. To our knowledge this is the first report of InGaAs/InP HBTs on a semi-insulating substrate.
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Dämbkes et al. (1984) studied this question.
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