We report the fabrication of a 2×2 crosspoint switch, which monolithically integrates passive waveguides and electroabsorption modulators on one chip, using the sputtered SiO2technique for quantum-well intermixing. The static performance of the modulators has been tested, and a modulation depth of 25 dB has been obtained at a wavelength of 1.55 μm for an applied bias of 2 V.
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Qiu et al. (2000) studied this question.
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