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A novel multibit MoS2 photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS2 flakes. The MoS2 photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 107, multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 104 s.
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Lee et al. (2016) studied this question.
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