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The research investigates how boron and nitrogen doping affect the structural, electronic, and thermal properties of silicon carbide nanotubes.

Atomic-Level Engineering of Silicon Carbide Nanotubes: Structural, Electronic, and Thermal Modulation via Boron and Nitrogen Doping

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The research investigates how boron and nitrogen doping affect the structural, electronic, and thermal properties of silicon carbide nanotubes.
Conducted first-principles calculations on pristine and doped silicon carbide nanotubes.
Analyzed changes in bond lengths, angles, and stability due to doping.
Evaluated electronic structure and thermal conductivity through density of states and phonon transport assessments.
Doping results in significant structural distortions and a reduction in band gap from 2.029 eV to near-zero values.
Co-doping configurations demonstrate up to 70% reduction in thermal conductivity due to mass disorder.
Increased charge carrier mobility and conductivity are attributed to strong dopant orbital influence.

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First-principles investigation explores doping effects on structural and electronic properties of SiCNTs, suggesting applications in electronics.

Jamal A. Talla (2026) studied this question.

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First-principles investigation explores doping effects on structural and electronic properties of SiCNTs, suggesting applications in electronics.