Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 1, 2000Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Epitaxial oxide thin films on Si(001)

View Full Paper
Ask AI
Bookmark
Share

Authors

ZYZhiyi YuMotorola (United States)JRJ. RamdaniPower Integrations (United States)JCJ. CurlessON Semiconductor (United States)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Yu et al. (2000) studied this question.

synapsesocial.com/papers/6a705accfe4101aa97e020aahttps://doi.org/10.1116/1.1303737
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)1999 · 71 citations
  2. 2Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon1991 · 206 citations
  3. 3Transistor characteristics with Ta/sub 2/O/sub 5/ gate dielectric1998 · 102 citations
  4. 4Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics1997 · 102 citations