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Bismuth-based halide perovskites have been proposed as a potential nontoxic alternative to lead halide perovskites; however, they have not realized suitable performance. Their poor performance has been attributed to substandard film morphologies and too wide of a band gap for many applications. Herein we used a two-step deposition procedure to convert BiI 3 thin films into A 3 Bi 2 I 9 (A = FA +, MA +, Cs +, or Rb + ), which resulted in a substantial improvement in film morphology, a larger band gap, and greater compositional tunability compared toresults when using aconventional single-step deposition technique. Additionally, we attempted to reduce the undesirably wide band gap in Rb 3 Bi 2 I 9 thin films by inducing chemical pressures through cation-size mismatch, with an underlying hypothesis that cation-size mismatch could induce compressive strain within the 2D Rb 3 Bi 2 I 9 lattice. However, we found that all A x Rb 3– x Bi 2 I 9 compositions with x > 0 adopted the 0D structure, and no changes to the band gap were observed with alloy. These results imply that the band gap of A x Rb 3– x Bi 2 I 9 is insensitive to A-site alloying.
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Hamdeh et al. (2019) studied this question.
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