Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 1, 1990Journal of Applied Physics

Biaxial and uniaxial stress in gallium arsenide on silicon: A linear polarized photoluminescence study

View Full Paper
Ask AI
Bookmark
Share

Authors

HSH. ShenNational Tsing Hua UniversityMDMitra DuttaUniversity of Illinois ChicagoDED. W. EckartUniversity of Miyazaki

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Shen et al. (1990) studied this question.

synapsesocial.com/papers/6a706552a528af2d65c38070https://doi.org/10.1063/1.347147
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Resonant photoluminescence excitation in GaAs grown directly on Si1988 · 8 citations
  2. 2Temperature effects on the photoluminescence of GaAs grown on Si1989 · 49 citations
  3. 3Heteroepitaxy of GaAs on Si: The effect of i n s i t u thermal annealing under AsH31988 · 40 citations
  4. 4Photoluminescence and x-ray properties of heteroepitaxial gallium arsenide on silicon1986 · 40 citations
  5. 5Optical properties of GaAs on (100) Si using molecular beam epitaxy1984 · 95 citations