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June 6, 1988Applied Physics Letters

Heteroepitaxy of GaAs on Si: The effect of i n s i t u thermal annealing under AsH3

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AFA. FreundlichUniversity of HoustonJGJ. C. GrenetUniversité Côte d'AzurGNG. NeuCentre National de la Recherche Scientifique

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Freundlich et al. (1988) studied this question.

synapsesocial.com/papers/6a70657a6c240de38cdbca17https://doi.org/10.1063/1.99595
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