Effects of microcracking on AlxGa1−xAs-GaAs quantum well lasers grown on Si

Data are presented demonstrating continuous (cw) 300 K operation of p-n AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on Si and fabricated with naturally occurring microcracks running parallel to or perpendicular to the laser stripe. Operation for over 17 h is demonstrated for a diode with a parallel microcrack inside the active region. Diodes with microcracks perpendicular to the laser stripe exhibit relatively ‘‘square’’ light output versus current (L-I) characteristics and spectral behavior indicating internal reflections involving coupled multiple (internal) cavities. The lasers have operated (cw, 300 K) as long as 16 h.