Room-temperature operation has been achieved for GaAs/AlGaAs heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate. These devices, which incorporate a large optical cavity structure grown by molecular beam epitaxy directly on a Si wafer, have exhibited threshold currents as low as 775 mA and power outputs as high as 27 mW/facet in pulsed operation.
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Windhorn et al. (1985) studied this question.
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