Misfit-dislocation generation by dissociated dislocations in quantum-well heterostructures

The mechanisms whereby 60^∘{} misfit dislocations are generated from dissociated threading dislocations in quantum-well heterostructures are considered. The two partial dislocations experience different misfit stresses, resulting in each partial having a different critical thickness. As a consequence, a number of different dislocation configurations are predicted, including the possibility of producing stacking faults of infinite width.