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September 5, 1988Applied Physics Letters

Extremely low resistance nonalloyed ohmic contacts on GaAs using InAs/InGaAs and InAs/GaAs strained-layer superlattices

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Authors

CPC. K. PengAU Optronics (Taiwan)GJG. JiNorth China Electric Power UniversityNKN. S. KumarSt Xavier’s College

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Peng et al. (1988) studied this question.

synapsesocial.com/papers/6a706640febe604dd7092fb6https://doi.org/10.1063/1.100109
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Also Consider

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  1. 1Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy1988 · 22 citations
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  3. 3Current crowding on metal contacts to planar devices1969 · 245 citations