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The saturation of the multiplied photocurrent at an intense illumination was studied for InGaAsP/InAlAs superlattice avalanche photodiodes. The dependence of the multiplication factor on the illumination intensity is small in comparison with conventional bulk APDs because the ionization rate ratio is larger. The multiplication factor decreases at an intense illumination mainly because of the space charge effect.
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Kagawa et al. (1993) studied this question.
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