Calculations are reported showing that in multilayered heterojunction structures the effective impact ionisation rates for electrons and holes can be very different, even if they are the same in the basic bulk materials. The reason for this is the difference in the band-edge discontinuities for electrons and holes and the lower phonon mean free path for holes in quantum well structures.
No takes yet. Share an insight, caveat, or question.
Chin et al. (1980) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: