p-n junction detector directly integrated with (Ga1−xAlx)As LOC-DBR laser

Integration of a GaAs- (Ga1−xAlx)As LOC-DBR laser with a detector is demonstrated. For integrated laser-detector pairs in which the laser output is coupled to the detector via a 460-μm-long interconnecting waveguide, differential transfer efficiencies around 1% are measured. Threshold current densities as low as 6.4 kA/cm2 around room temperature are obtained.