Details on the design, fabrication and properties of the first interferometric intensity modulators with monolithically integrated optical gain are presented. These guided-wave devices make use of two sets of InP-based quantum well heterostructures that are contained in a single base wafer and individually designed for enhanced electrorefraction and amplification at 1.55 mu m. The unique quantum well electrooptic properties as well as the fabrication techniques and waveguide design issues that determine final device performance are discussed.>
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Zucker et al. (1992) studied this question.
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