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The carrier-induced refractive-index change, mode gain and spontaneous emission factor are evaluated for AlGaInP single-quantum-well laser diodes with separate-confinement heterostructures. The results are compared with those of AlGaInP double-heterostructure lasers. The values of the α parameter, defined as the ratio of the real part of the refractive index to the imaginary part of the refractive index, are estimated as 4.9 and 12.8.
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Tanaka et al. (1990) studied this question.
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