GaInAsSb/GaSb infrared photodetectors prepared byMOCVD

GaInAsSb/GaSb heterojunction photodetectors have been grown by metalorganic chemical vapour deposition (MOCVD). The room temperature performances of the photodetectors are described. The responsivity spectrum is peaked at 2.25 µm and cut off at 1.7 µm in the short wavelength and at 2.4 µm in the long wavelength, respectively. The room temperature detectivity D* is 109 cm Hz1/2 W-1 at 2.25 µm.