High-performance GaSb planar PN junction detector

This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μ m, a maximum detectivity of 8.73 × 10 10 cm·Hz 1/2 /W, and a minimum dark current density of 1.02 × 10 −5 A/cm 2 . Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.