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High-temperature, long-term life tests of GaInAs/InP heterostructure avalanche photodiodes have been carried out to establish criteria for high reliability photodetectors in 1.55μm-wavelength optical submarine cable systems. A failure rate of less than 0.2 FIT at 10°C was predicted for the first time with an activation energy of 0.7 eV.
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Matsushima et al. (1988) studied this question.
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