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A wide-band high-gain AGC amplifier stabilizing the output dc level against a broad gain variation is proposed and monolithically integrated using high-speed 1-μm Si-bipolar IC technology. The fabricated IC exhibits a maximum gain of 39 dB, gain dynamic range of 44 dB, bandwidth of 800 MHz, and output dc-level fluctuation of 8 mV, and realizes wide dynamic range and direct dc-coupling of the multistage AGC amplifier. Also, in order to examine the feasibility of the fabricated IC, a 1.5-μm-wavelength optical transmission experiment was carried out using DFB-LD and InGaAs-APD. Measured minimum received optical power for an error rate of 10-9is -40 dBm at 560 Mbit/s and -38 dBm at 1.12 Gbit/s. Optical dynamic range of 30 dB is also achieved by using the fabricated IC and APD.
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Kinoshita et al. (1987) studied this question.
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