Tunable photodetectors based on strain compensated GaInAsSb/AlAsSb multiple quantum wells grown by molecular beam epitaxy

GaInAsSb/AlGaAsSb strain compensated multiple quantum well (MQW) p-i-n structures grown by molecular beam epitaxy on GaSb substrates have been successfully fabricated into tunable photodiodes, which showed a large photoresponse peak shift up to 30 meV (80 nm) at 77 K under a reverse bias of 10 V due to quantum confined Stark effect (QCSE). The QCSE persists up to room temperature and the values of the excitonic absorption peak shifts agree well with the calculated results. Based on the observed QCSE, an electrically tunable resonant cavity enhanced photodetector with strain compensated MQW structure is proposed and modeled.