Selective Meltbacked Substrate Inner-Stripe AlGaAs/GaAs Lasers Operated under Room Temperature CW Condition

A novel lateral-mode controlled AlGaAs/GaAs inner-stripe laser is demonstrated which is fabricated by a one-step liquid phase epitaxial process using a newly developed selective meltback technique. The laser consists of V-groove substrate and six Al x Ga 1- x As layers with different Al content forming a built-in rib-waveguide structure. In the fabrication, difference of meltback speed between GaAs and Al 0.5 Ga 0.5 As crystals was utilized. It was found that GaAs crystal was meltbacked rapidly by a factor of about fifteen compared with Al 0.5 Ga 0.5 As layer. The laser fabricated was operated under CW condition at 20°C with threshold current of 65 mA.