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A new channeled substrate (GaAl)As double-heterostructure laser with mode control as well as internal current confinement is described. The narrow active region (3–3.5 mm) surrounded by GaAlAs is buried in the etched channel, around which a reverse-biased heterojunction is formed. The threshold current is as low as 20 mA cw, and highly stable fundamental-mode lasing is observed.
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Shima et al. (1981) studied this question.
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