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The Auger recombination lifetimes of the excess carriers in p-type InAs, GaSb, InP, and GaAs are calculated. The calculation is carried out along the line of Beatie and Smith taking into account spin split-off band effect. It is concluded that the spin split-off band effect plays a very important role on the Auger recombination in p-type InAs, GaSb, InP, and GaAs whose spin split-off energies are nearly equal to or smaller than the band-gap energies.
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Masumi Takeshima (1972) studied this question.
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