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The photoluminescence linewidths of strained InxGa1−xAs/GaAs quantum wells grown on (111)B GaAs substrates are shown to differ radically from those grown on (001) substrates. In (111)B structures, the linewidth in wide wells is broadened significantly compared with (001) structures. This broadening cannot be explained by well width or alloy fluctuations alone, and suggests the presence of another mechanism which we believe is due to the piezoelectric field and its sensitivity to screening under illumination.
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Khoo et al. (1999) studied this question.
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