Effect of parameter variations on the performance of GaAs/AlGaAs multiple-quantum-well electroabsorption modulators

A theoretical investigation is presented of the dependence of electroabsorption in GaAs/Al/sub x/Ga/sub 1-x/As multiple-quantum-well (MQW) structures on the MQW parameters (Al mole fraction x, well thickness L/sub z/ barrier thickness L/sub b/ and interface quality) and on the applied electric field studied. The on/off ratio of a modulator using MQWs with x=0.45, L/sub z/=75 AA, and L/sub b/=78 AA is predicted to increase by 20% compared to that of a modulator using MQWs with x=0.3, L/sub z/=100 AA, and L/sub b/=100 AA, when the MQW total active region thickness is 1 mu m.>