Answers are grounded in this paper and cite their sources.
We report on the design, fabrication and performance of a hetero-integrated III-V on silicon distributed feedback lasers (DFB) at 1310 nm based on direct bonding and adiabatic coupling. The continuous wave (CW) regime is achieved up to 55 °C as well as mode-hop-free operation with side-mode suppression ratio (SMSR) above 55 dB. At room temperature, the current threshold is 36 mA and the maximum coupled power in the silicon waveguide is 22 mW.
No takes yet. Share an insight, caveat, or question.
Duprez et al. (2015) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: