Sufface recombination velocity in p-type GaAs is characterized by using a method which combines minority electron lifetime and photoluminescence measurements. Surface recombination velocities for samples with hole concentrations of 10 17 cm -3 and 10 18 cm -3 were 4.2×10 6 cm/s and 7.7×10 6 cm/s respectively, which are larger than the previously reported results for n-type GaAs. This difference is attributed to the difference in the thermal velocities between minority electrons and minority holes.
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Itô et al. (1994) studied this question.
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