The I–U characteristics, junction capacitance and optical collection efficiency of p-GaAs–n-ZnSe diodes prepared by GaAs liquid phase epitaxy from Sn solutions have been measured. Preliminary results show that space charge limited currents in the ZnSe dominate the I–U characteristics and recombination of photoexcited carriers at heterojunction interface states is negligible.
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Balch et al. (1972) studied this question.
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