Epitaxial growth and the conduction properties of ZnSeGaAs-heterojunctions

Heterojunctions between n-ZnSe and p(n)-GaAs have been prepared by chemical transport reaction. Study of the growth habits of ZnSe on GaAs monocrystals have shown that an epitaxial deposit of ZnSe can be obtained on (111) and (110) faces of GaAs. The current characteristics exhibit exponential voltage dependences and only a weak temperature dependence. A semiquantitative interpretation is given on the basis of a one step tunnelling-recombination model for the forward direction and of a Zener tunnelling model in the reverse direction.