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Epitaxial heterojunctions have been prepared by chemical vapor deposition of Ge onto (001) GaAs substrates using the hydrogen reduction of GeCl4. Scanning x-ray microscopy revealed a cross-grid of dislocation lines at the interface. It is believed that these two sets of misfit dislocations in the interface plane result from a partial accommodation of the lattice mismatch between Ge and GaAs.
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Krause et al. (1967) studied this question.
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