LPE Growth and Pulsed Room Temperature Laser Operation of In1-xGaxAszP1-z on (100) GaAs1-yPy (y0.39)

Lattice-matched In 1- x Ga x As z P 1- z epitaxial layers with various compositions (0.72≦ x ≦0.89, 0.03≦ z ≦0.37) have been grown on VPE (100) GaAs 1- y P y ( y 0.39) by ramp cooling LPE (initial supercooling 10°C, growth temperature 790°C and cooling rate 0.5°C/min). Energy band gaps of these alloys have been determined by photoluminescence spectra at room temperature. Double heterostructures grown on the basis of conditions as presented here have lased at approximately 640 nm at room temperature. The characteristic temperature of the threshold current density is as large as 90 K.