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An LPE growth method of In 1- x Ga x P y As 1- y layers on (1, 0, 0) GaAs is described over a wide range of band-gap energy. Melt compositions for lattice-matched growth of these layers are given. Photoluminescence spectra of the layers are reported, and their spectral shape and luminescent-peak energies are discussed in comparison with In 1- x Ga x P y As 1- y grown on InP.
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Mukai et al. (1980) studied this question.
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