InP-Ga0.47In0.53As-InP double-heterostructure laser diodes which emit infared radiation near 1.6 μm were prepared. At 77 K, the laser threshold current density was about 2500 A/cm2. Cracking of GaxIn1−xAs epitaxial layers on InP substrates due to lattice mismatch was observed, and the composition range of GaxIn1−xAs in which no cracking occurred was found.
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Nagai et al. (1976) studied this question.
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