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Room-temperature cw operation has been achieved for stripe-geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid-phase epitaxy on melt-grown InP substrates, and stripes were defined by using proton bombardment to produce high-resistance current-confining regions.
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Hsieh et al. (1976) studied this question.
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