Photoexcited resonance-enhanced nitrogen-trap GaAs<inf>1-x</inf>P<inf>x</inf>:N laser

Data (77 K) onx = 0.41andx = 0.46N-doped GaAS1-xPxare presented showing that the electron-hole recombination probability may be resonantly enhanced when the crystal composition is varied and the band minimum is made degenerate, or nearly degenerate, with theA-line N isoelectronic trap state (EΓ ≈ EN ~ 2.0eV,x ≈ 0.40). Data onx = 0.46GaAs1-xPx:N suggest that resonant enhancement occurs in a "turning" range|EΓ - EN| ≤ 55meV. A consequence of this work is that photopumped GaAs1-xPx:N (x = 0.46) exhibits laser operation at the unusually high photon energy of 2.032 eV (6100 Å, orange). The idea of resonance-enhanced recombination and the results now demonstrated in GaAs1-xPx:N are general enough to be applicable also to p-n junctions.