Stimulated Emission in an Indirect Semiconductor: N Isoelectronic Trap-Assisted Recombination in GaAs1−xPx (x > 0.44)

Due to the short-range nature of the N isoelectronic trap potential in GaAs1−xPx and the favorable band structure of this III–V compound, strong recombination radiation can be excited on either side of the direct-indirect transition (x=0.44, 77°K). By means of cw excitation with an argon-ion laser, stimulated emission is demonstrated at 77°K in N-doped indirect GaAs1−xPx (x=0.50) operating on NN pair recombination transitions.