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The fabrication and properties of GaAs tunnel diodes are described. The material preparation is discussed; devices are described which have been fabricated consistently with peak to valley current ratios > 15:1, with voltage swings in the range from 0.9 to 1.2, and with current densities from 2000 amp/cm2 to over 10,000 amp/cm2 (and with correspondingly low capacitances, e.g., capacitances as low as 0.2 μμf/ma and g/C figures of merit as high as 5×1010 sec-1). The temperature behavior of typical units is presented. Applications particularly well suited to GaAs units are mentioned.
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Holonyak et al. (1960) studied this question.
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