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The elevated-pressure resistance behavior of differently doped samples suggests that the ratio of mobility in the [000] conduction band to that in the [100] band is constant and independent of initial mobility. A mobility ratio of 39 is indicated at atmospheric pressure. Carrier freeze-out with respect to the [100] band was observed for S- and Si-doped samples but not with Se and Te.
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P. N. Adler (1969) studied this question.
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